一、个人基本情况

何雄，男，汉族。2014年毕业于湖北工业大学。2016年6月、2019年12月在武汉理工大学获硕士、博士学位，师从孙志刚教授。2020年3月-2022年9月，在华中科技大学从事博士后工作。以第一、共一作者等身份在J. Mater. Sci. Technol.、Phys. Rev. B、J. Mater. Chem. A、ACS Appl. Mater. Interfaces、J. Phys.: Condens. Matter、Nanomaterials、J. Appl. Phys.、Chin. Phys. B、J. Magn. Magn. Mater.、物理学报等国内外学术期刊上发表相关学术论文30余篇。

二、科研

1、科研项目

国家级2012年大学生创新创业训练计划项目（No.: 201210500039），主持.

国家自然科学基金面上项目（Nos.: 11574243，11834012）, 参与.

国家重点研发计划“政府间国际科技创新合作/港澳台科技创新合作重点专项”项目（No.: 2018YFE0111500）, 参与

2、代表性论文

[1] X. He, Z.C. Xia, H.Y. Niu, Z. Zeng. Magnetoresistance retraction behaviour of Ag/p-Ge:Ga/Ag device under pulsed high magnetic field [J]. J. Mater. Sci. Technol., 2022, 114: 1-6. https://doi.org/10.1016/j.jmst.2021.08.040

[2] H.Y. Niu, X. He, Z. Zeng, Y.J. Song, D.Q. Jiang, H. Huang, Y.Y. Liang, L.X. Xiao, Z.W. Ouyang, Z.C. Xia. Magnetoresistance relaxation steps originating from dynamic spin-orbital interactions in Ca3Ru2O7 [J]. Phys. Rev. B, 2022, 106(17): 174415. https://doi.org/10.1103/PhysRevB.106.174415

[3] X. He, Z. Xia, H. Niu, Y. Song, Z. Zeng, D. Jiang, Y. Liang, H. Huang. Evolution of electrical transport property in Ge-based negative differential resistance devices under pulsed high magnetic field [J]. Phys. Status Solidi RRL, 2022, 16(8): 2200165. https://doi.org/10.1002/pssr.202200165

[4] Z. Zeng, X. He, Y.J. Song, H.Y. Niu, D.Q. Jiang, X.X. Zhang, M. Wei, Y.Y. Liang, H. Huang, Z.W. Ouyang, Z.X. Cheng, Z.C. Xia. High-Magnetic-Sensitivity Magnetoelectric Coupling Origins in a Combination of Anisotropy and Exchange Striction [J]. Nanomaterials, 2022, 12(18): 3092. https://www.mdpi.com/2079-4991/12/18/3092

[5] J. Wang, F. Luo, C. Zhu, S. Zhang, Z. Yang, J. Wang, X. He, Y. Zhang, Z. Sun. Linear magnetoresistance in textured Bi1−xSbx ribbons prepared by melt spinning method [J]. J. Appl. Phys., 2022, 132(13): 135103. https://doi.org/10.1063/5.0112457

[6] X. He, Z. Yang, C. Zhu, B. He, F. Luo, P. Wei, W.Y. Zhao, J.F. Wang, Z.G. Sun. Negative differential resistance and unsaturated magnetoresistance effects based on avalanche breakdown [J]. J. Phys.: Condens. Matter, 2020, 32(30): 305701. https://doi.org/10.1088/1361-648X/ab80f2

[7] X. He, B. He, H. Yu, Z.G. Sun, J. He, W.Y. Zhao. Separating interface magnetoresistance from bulk magnetoresistance in silicon-based Schottky heterojunctions device [J]. J. Appl. Phys., 2019, 125(22): 224502. https://doi.org/10.1063/1.5097736

[8] X. He, Z.G. Sun. Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device [J]. Chin. Phys. B, 2018, 27(6): 067204. https://doi.org/10.1088/1674-1056/27/6/067204

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电子邮箱：hexiong@ctgu.edu.cn