讲座题目：Rational design of oxide semiconductors for three-dimensional vertically integrated 

                     transistors

主办单位： 三峡数学研究中心/理学院

报告专家： 胡耀乔 博士 （德州大学达拉斯分校）

报告时间：  2023年2月17日（周五）下午（3:00-5:00）

报告地点：L1218

专家简介：胡耀乔，美国德州大学达拉斯分校博士。2018年获得香港科技大学硕士学位，2015年获得南开大学学士学位。曾在美国德州仪器公司担任研发工程师。研究领域为半导体材料及其微纳电子器件的应用，已发表学术论文20余篇。

报告摘要：The development of high-performance p-type and n-type oxides with good carrier mobilities 

and wide band gaps is critical for the applications of metal oxide (MO) semiconductors in back-end-of-line (BEOL) devices for monolithic three-dimentional vertical integrated CMOS. [S. Salahuddin et al. Nat Electron. 1, 442 (2018)] Currently available oxide semiconductors are limited to n-type conduction, with p-type oxides showing inferior performance due to their carrier mobilities and dopability significantly lower than that of n-type oxides. In this talk, I will present our research work on the identification of novel high mobility p-type oxide candidates with wide band gaps and robust phase stabilities. Using first principles studies, we have identified several promising candidates including TiSnO₃ and Ta₂SnO₆ that would be of interest as high-mobility p-type oxides. Electron transport study on n-type oxides will also be presented, which sheds light on the defect controlling for high performance n-type BEOL devices.